Course Information
Course title
 Advanced Materials: Fundamentals and Applications 
Semester
 111-2 
Designated for
 COLLEGE OF SCIENCE  GRADUATE INSTITUTE OF PHYSICS  
Instructor
 LI-CHYONG CHEN 
Curriculum Number
 Phys8150 
Curriculum Identity Number
 222ED5480 
Class
  
Credits
 3.0 
Full/Half
Yr.
 Half 
Required/
Elective
 Elective 
Time
 Monday 2,3,4(9:10~12:10) 
Remarks
 The upper limit of the number of students: 14. 
  
Course introduction video
 
Table of Core Capabilities and Curriculum Planning
 Table of Core Capabilities and Curriculum Planning
Course Syllabus
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Course Description

In this course, students will learn the fundamental properties, synthesis methods and applications of various advanced materials, ranging from semiconductors, to quantum matters and low-dimensional nano-materials.
Start from Si technology, you will learn the thermodynamics and kinetics of bulk and thin film growth processes. Especially, the principles and development of the specific process and factors that control the material quality will be taught. In addition, some important issues like contact problem, doping and dielectric layer would be discussed. Besides Si, the second and third generation semiconductors, such as GaAs and GaN, would be introduced. Breakthroughs in synthesis of these materials have enabled or enhanced their unique properties, which can change our daily life.
After introducing the semiconductor properties and applications, we will take a step forward to a variety of materials, including ferroelectrics, oxide-based superconductor, spintronics materials, followed by energy materials such as thermoelectrics, perovskites, polymers and MOF. Low-dimensional materials from 2D, 1D to 0D will be taught in the end of the course. 

Course Objective
 This multidisciplinary course will provide the knowledge of the physics and materials science of different advanced materials. Moreover, the course provides a comprehensive overview of a variety of growth methods, ranging from solution-based process, solid state synthesis, ball milling, to vapor phase deposition techniques such as sputtering, CVD, MOCVD, MBE and pulsed laser ablation.
The ultimate course objective is to enhance the critical and innovative thinking of students by in depth understanding the relationship between the growth/morphology/structure of the materials and the fundamental properties, which holds the key for realizing practical applications of these advanced materials and devices. 
Course Requirement
 General physics and General chemistry  
Student Workload (expected study time outside of class per week)
  
Office Hours
 Appointment required. Note: 另約時間 備註： Professor: Wednesday, 2-4 pm at CCMS1020 TA: Zi-Liang Yang 楊子良: Wednesday, 2-4 pm, mail: F10245003@ntu.edu.tw Please make a appointment before meeting.  
Designated reading
  
References
 KITTEL, Charles, Introduction to Solid State Physics, 8th edition. Wiley, 2004.
CHUNG, Yip-Wah and KAPOOR, Monica, Introduction to Materials Science and Engineering, 2nd edition. CRC Press, to appear in April 2022. (1st edition published in 2006).
NAKAMURA, Shuji; CHICHIBU, Shigefusa F. (ed.). Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes. CRC Press, 2000.
NAKAMURA, Shuji; PEARTON, Stephen; FASOL, Gerhard. The Blue Laser Diode: The Complete Story. Springer Science & Business Media, 2000.
XIAO, Hong. Introduction to Semiconductor Manufacturing Technology, 2nd edition. SPIE Press E-Books, 2012.
PIERSON, H. O. Handbook of Chemical Vapor Deposition. Noyes Publication, 1999.
JONES, Anthony C.; HITCHMAN, Michael L. (ed.). Chemical Vapor Deposition: Precursors, Processes and Applications. Royal Society of Chemistry, 2009. 
Grading
    
Adjustment methods for students
  
Teaching methods
 Provide students with flexible ways of attending courses
Assignment submission methods
 Mutual agreement to present in other ways between students and instructors
Exam methods
Others
 Negotiated by both teachers and students
Progress
Week
Date
Topic
Week 1
 2/20  Si (I), bulk and thin film growth, semiconductor fundamentals, doping, contact, dielectric, devices, beyond Moore's law 
Week 2
 2/27  National Holiday 
Week 3
 3/6  GaAs, MBE growth, direct band gap, LEDs, laser diodes, etc.
 
Week 4
 3/13  GaN, MOCVD growth, alloying, blue LED, lighting and HEMT
 
Week 5
 3/20  Bulk crystals, solid state synthesis (& high pressure), X-ray diffraction, ferroelectrics
 
Week 6
 3/27  Spintronics & quantum matters (I), sputtering principles & various industrial applications
 
Week 7
 4/3  National Holiday
 
Week 8
 4/10  Spintronics & quantum matters (II), pulsed laser ablation, oxide-based// SiC/AlN, high power devices
Midterm Essay Due
 
Week 9
 4/17  Solar cells, silicon, polymers and perovskites, molecular designs, solution-based processes 
Week 10
 4/24  Thermoelectrics, ball milling 
Week 11
 5/1  Metal-Organic Frameworks, adsorption, diffusion, membrane gas separation, CO2 capture
 
Week 12
 5/8  2D mater. for catalysis; 1D & 0D mater. for various applications
 
Week 13
 5/15  2D materials (I): various growth techniques (from solution-based to wafer-based), various characterizations tools
 
Week 14
 5/22  2D materials (II): electronic and optoelectronic applications
 
Week 15
 5/29  Final Exam (Written Test)
 
Week 16
 6/5  Final Exam (Oral Presentation)