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課程名稱 |
半導體元件物理
Physics of Semiconductor Devices |
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開課學期 |
113-1 |
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授課對象 |
電機資訊學院 電機工程學研究所 |
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授課教師 |
張子璿 |
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課號 |
EE5113 |
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課程識別碼 |
921EU7110 |
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班次 |
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學分 |
3.0 |
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全/半年 |
半年 |
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必/選修 |
選修 |
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上課時間 |
星期三2,3,4(9:10~12:10) |
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上課地點 |
電二143 |
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備註 |
本課程以英語授課。
總人數上限：80人 |
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課程簡介影片 |
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核心能力關聯 |
本課程尚未建立核心能力關連 |
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課程大綱
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為確保您我的權利,請尊重智慧財產權及不得非法影印
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課程概述 |
We will cover the fundamental physical principles that govern the device operation and the application. Emphasis is placed on understanding background of the individual device operation. First part of the class will cover topics include basic carrier transports in semiconductors, including conduction electrons, and holes; Boltzman Transport Equation (BTE). Non-ideal properties of transistor, including heat, carrier scattering, defect trapping and recombination will be discussed in details. Latter part of the class will cover novel device physics and technology focusing front-end technology: MOSFET/FinFET/NSFET, Short Channel effect, ballistic transport, electron tunneling. |
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課程目標 |
Prepare the student to be able to understand, explore, and design the novel electron devices and state-of-the-art knowledge. This course aims to provide the essential knowledge and fill-in the gap between the textbook and the advanced technology node applied in the Industry.. Student would be expected to understand fundamentally the theory and mechanism of devices physics of advanced technology and be able to read the literature independently. |
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課程要求 |
Basic course of Semiconductor devices: Electronics I
Solid-State Electronics (undergraduate level suggested) |
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預期每週課前或/與課後學習時數 |
6-10 hours. |
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Office Hours |
每週三 13:00~14:50 備註： You can always send an email to schedule an appointment with me or TA. |
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指定閱讀 |
1. Physics of Semiconductor Devices 3rd Edition, Simon S.M. Sze, 2007 (Required)
1.1 Physics of Semiconductor Devices 4th Edition, Simon S.M. Sze, 2021 (Encouraged, homework exercise questions)
2. Fundamentals of Modern VLSI Devices 3rd Edition, Yuan Taur, ISBN-13: 9781108480024
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參考書目 |
Course slides/handout provided in class
Modern Semiconductor Devices for Integrated Circuits, Chenming Calvin Hu, 2010 (good reference for beginner) |
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評量方式
(僅供參考) |
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No. |
項目 |
百分比 |
說明 |
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1. |
Homework |
20% |
Weekly assigned homework, due 2 weeks. No late submission allowed |
2. |
Midterm |
40% |
A open-book mid-term exam. Sample mid-term question will be delivered 1 week before. |
3. |
Final |
40% |
A open-book final exam. Sample final-term question will be delivered 1 week before. |
4. |
Bonus |
0% |
From homework bonus question, question in class, or random attendance check. Up to 5% in total points |
- 本校尚無訂定 A+ 比例上限。
- 本校採用等第制評定成績，學生成績評量辦法中的百分制分數區間與單科成績對照表僅供參考，授課教師可依等第定義調整分數區間。詳見學習評量專區 (連結)。
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針對學生困難提供學生調整方式 |
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上課形式 |
提供學生彈性出席課程方式 |
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作業繳交方式 |
學生與授課老師協議改以其他形式呈現 |
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考試形式 |
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其他 |
由師生雙方議定 |
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週次 |
日期 |
單元主題 |
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第0週 |
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Evaluation Exam for Credit Transfer Evaluation 9:00am at MD517. |
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第1週 |
09/04/2024 |
Introduction
Physics and Properties of semiconductor,
Sze Chapter 1. |
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第2週 |
09/11/2024 |
Physics and Properties of semiconductor,
Sze Chapter 1. |
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第3週 |
09/18/2024 |
Charge Carrier Transport, Boltzman Transport Equation (BTE), Tunneling events. |
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第4週 |
09/25/2024 |
P/N Junction,
Sze Chapter 2. |
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第5週 |
10/02/2024 |
Metal to Semiconductor Interface,
Sze Chapter 3. |
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第6週 |
10/09/2024 |
Metal-Oxide-Semiconductor Interface (MIS),
Sze Chapter 4. |
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第7週 |
10/16/2024 |
Bipolar Junction Transistor(BJT)/Heterogeneous Bipolar Junction Transistor(HBT),
Sze Chapter 5. |
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第8週 |
10/23/2024 |
Midterm |
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第9週 |
10/30/2024 |
MOSFET
Sze Chapter 6 |
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第10週 |
11/06/2024 |
MOSFET and transition to FinFETs
Sze Chapter 6 with Yuan Taur's supplementary |
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第11週 |
11/13/2024 |
Advanced Node Technology |
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第12週 |
11/20/2024 |
Gate-All-Around/NanoSheet/CFET & 3D structures |
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第13週 |
11/27/2024 |
MODFET & High Electron Mobility Transistors (HEMTs) |
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第14週 |
12/04/2024 |
Transient Devices/CCD/Single Electron Transistors |
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第15週 |
12/11/2024 |
TBD |
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第16週 |
12/18/2024 |
Final Exam |
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