課程名稱 |
半導體元件物理 Physics of Semiconductor Devices |
開課學期 |
109-1 |
授課對象 |
電機資訊學院 電子工程學研究所 |
授課教師 |
張子璿 |
課號 |
EE5113 |
課程識別碼 |
921 U7110 |
班次 |
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學分 |
3.0 |
全/半年 |
半年 |
必/選修 |
選修 |
上課時間 |
星期一2,3,4(9:10~12:10) |
上課地點 |
電二229 |
備註 |
奈米電子組碩士生在學期間,三選一核心必修課程之一。 總人數上限:80人 |
Ceiba 課程網頁 |
http://ceiba.ntu.edu.tw/1091EE5113_ |
課程簡介影片 |
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核心能力關聯 |
本課程尚未建立核心能力關連 |
課程大綱
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為確保您我的權利,請尊重智慧財產權及不得非法影印
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課程概述 |
We cover the fundamental physical principles that govern the device operation and the application. Emphasis is placed on understanding background of the individual device operation. First part of the class will cover topics include basic carrier transports in semiconductors, including conduction electrons, and holes; charge and heat transport; carrier trapping and recombination. Latter part of the class will cover novel device physics focusing MOSFET, ballistic transport, electron tunneling, single electron transistors, spin-electronics, and quantum electronics. |
課程目標 |
Prepare the student to be able to understand, explore, and design the novel electron devices and state-of-the-art knowledge. |
課程要求 |
Basic course of Semiconductor devices
Solid State Electronics (suggested) |
預期每週課後學習時數 |
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Office Hours |
每週三 13:00~14:00 |
指定閱讀 |
待補 |
參考書目 |
1. Physics of Semiconductor Devices 3rd Edition, Simon S.M. Sze, 2007 (Required)
2. Modern Semiconductor Devices for Integrated Circuits, Chenming Calvin Hu, 2010
3. Fundamentals of Modern VLSI Devices 2nd Edition, Yuan Taur, ISBN-13: 978-1107635715 |
評量方式 (僅供參考) |
No. |
項目 |
百分比 |
說明 |
1. |
Homework |
15% |
|
2. |
Midterm |
40% |
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3. |
Final Exam |
40% |
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4. |
Attendance |
5% |
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週次 |
日期 |
單元主題 |
第1週 |
9/14 |
Physics and Properties of Semiconductors: Chapter 1/Sze |
第2週 |
9/21 |
Physics and Properties of Semiconductors: Chapter 2/Sze |
第3週 |
9/28 |
Charge Carrier Transport, BTE, Tunneling |
第4週 |
10/05 |
P-N Junctions: Chapter 2/Sze |
第5週 |
10/12 |
Metal-Semiconductor Contacts(MS): Chapter 3/Sze |
第6週 |
10/19 |
Metal-Insulator-Semiconductor(MIS) Capacitors: Chapter 4/Sze
no class |
第7週 |
10/26 |
BJT/HBT SZE Chapter 5 |
第8週 |
11/02 |
To be determined. |
第9週 |
11/09 |
Midterm |
第10週 |
11/16 |
MOSFETs Sze/Chapter 6 |
第11週 |
11/23 |
MOSFET Oxide Interface |
第12週 |
11/30 |
FinFETs & GAA & Beyond (Fabrications) |
第13週 |
12/07 |
FinFETs & GAA & Beyond II (Characterization) |
第14週 |
12/14 |
MODFET/High Electron Mobility Transistors |
第15週 |
12/21 |
Transient Devices, CCD, Sensors |
第16週 |
12/28 |
Single Electron Transistors & Quantum Computer |
第17週 |
1/04 |
Final Exam |
第18週 |
1/11 |
Make up Final at BL 101 9:10am~12:00pm |
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