課程資訊
課程名稱
寬能隙半導體技術
Wide Gap Semiconductor Technologies 
開課學期
101-1 
授課對象
電機資訊學院  電機工程學研究所  
授課教師
馮哲川 
課號
OE5026 
課程識別碼
941EU0350 
班次
 
學分
全/半年
半年 
必/選修
選修 
上課時間
星期四5,6,7(12:20~15:10) 
上課地點
博理212 
備註
本課程以英語授課。
總人數上限:30人 
 
課程簡介影片
 
核心能力關聯
核心能力與課程規劃關聯圖
課程大綱
為確保您我的權利,請尊重智慧財產權及不得非法影印
課程概述

consisting of four major parts as
[A] Fundamentals
Introduction to Wide Gap Semiconductors; physics and properties of GaN, SiC, ZnO & related materials; GaN-based Quantum Wells (QWs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques;
[B] Structures, properties and MOCVD growth of III-Nitrides
MOCVD systems; Substrates; MO precursors and source materials; Preparation prior to epitaxy; Buffer growth and Physics; Un-doped GaN; Si-doped n-type GaN; Mg-doped p-type GaN; InGaN and phase separation; AlGaN and AlN; InGaN-GaN multiple quantum well (MQW); InGaN-based LED; InGaN-based LD; AlGaN-GaN SL; AlGaN-based UV detectors; Deep UV light emitters;
[C] Advanced Studies
Penetrating optical, electrical and structural analysis; Optoelectronic device design; Development of blue LEDs and LDs. Wavelengths tuning by controlling the composition. GaN-based LED & LD with various wavelengths, ranging in red-yellow-green-blue-violet, in one substrate material. Mass production and fast characterization of GaN materials and structures;
[D] Applications of wide gap semiconductors
Display technology; Solid state lighting; Optical Communication; Optics; Photonics; Automobiles; Power electronics; Solar cells; Aero- and space-technology.
 

課程目標
Help students to get knowledge and basic skills on Fundamentals to Wide Gap Semiconductors; physics and properties of GaN, SiC, ZnO & related materials; GaN-based Quantum Wells (QWs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques. 
課程要求
General College Physics。

Grading:
Homework (30%), mid-term exam (30%), final exam (40%) 
預期每週課後學習時數
 
Office Hours
 
參考書目
Textbook: The Blue Laser Diode - The Complete Story
by Nakamura, Shuji, Pearton, Stephen, and Fasol, Gerhard (Springer, 2000)

Reference: to be spread on teaching course
 
指定閱讀
 
評量方式
(僅供參考)
   
課程進度
週次
日期
單元主題
無資料