課程資訊
課程名稱
寬能隙半導體技術
Wide Gap Semiconductor Technologies 
開課學期
100-1 
授課對象
電機資訊學院  電機工程學研究所  
授課教師
馮哲川 
課號
OE5026 
課程識別碼
941EU0350 
班次
 
學分
全/半年
半年 
必/選修
選修 
上課時間
星期四5,6,7(12:20~15:10) 
上課地點
博理212 
備註
本課程以英語授課。
總人數上限:30人 
Ceiba 課程網頁
http://ceiba.ntu.edu.tw/1001OE5026 
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課程概述

Wide Gap Semiconductor Technologies (WGST), 2011 Fall semester

Text book contents
Preface Foreword
1. Introduction
2. Background
3. Physics of Gallium Nitride and Related Compounds
4. GaN Growth
5. p-Type GaN Obtained by Electron Beam Irradiation
6. n-Type GaN
7. P-Type GaN
8. InGaN
9. Zn and Si Co-Doped InGaN/AIGaN Double-Heterostructure Blue and Blue-Green LEDs
10. InGaN Single-Quantum-well LEDs
11. Room-Temperature Pulsed Operation of Laser Diodes
12. Emission Mechanisms of LEDs and LDs
13. Room Temperature CW Operation of InGaN MQVV LDs
14. Latest Results: Lasers with Self-Organized InGaN Quantum Dots
15. Conclusions

 

課程目標
1) Contents: consisting of four major parts as
[A] Fundamentals
Introduction to Wide Gap Semiconductors; physics and properties of GaN, SiC, ZnO & related materials; GaN-based Quantum Wells (QWs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques;
[B] Structures, properties and MOCVD growth of III-Nitrides
MOCVD systems; Substrates; MO precursors and source materials; Preparation prior to epitaxy; Buffer growth and Physics; Un-doped GaN; Si-doped n-type GaN; Mg-doped p-type GaN; InGaN and phase separation; AlGaN and AlN; InGaN-GaN multiple quantum well (MQW); InGaN-based LED; InGaN-based LD; AlGaN-GaN SL; AlGaN-based UV detectors; Deep UV light emitters;
[C] Advanced Studies
Penetrating optical, electrical and structural analysis; Optoelectronic device design; Development of blue LEDs and LDs. Wavelengths tuning by controlling the composition. GaN-based LED & LD with various wavelengths, ranging in red-yellow-green-blue-violet, in one substrate material. Mass production and fast characterization of GaN materials and structures;
[D] Applications of wide gap semiconductors
Display technology; Solid state lighting; Optical Communication; Optics; Photonics; Automobiles; Power electronics; Solar cells; Aero- and space-technology.

Details can also be seen from the contents of the text book.

 
課程要求
 
預期每週課後學習時數
 
Office Hours
 
參考書目
The Blue Laser Diode - The Complete Story
by Nakamura, Shuji, Pearton, Stephen, and Fasol, Gerhard (Springer, 2000)
 
指定閱讀
pre-courses required : General College Physics 
評量方式
(僅供參考)
 
No.
項目
百分比
說明
1. 
Homework 
30% 
 
2. 
mid-term exam  
30% 
 
3. 
final exam 
40% 
 
 
課程進度
週次
日期
單元主題
第1週
9/15  Ch1-5 
第2週
9/22  Ch1-5 
第3週
9/29  Ch1-5 
第4週
10/06  Ch1-5 上課延長一小時 
第5週
10/13  停課 
第6週
10/20  Ch6-8 上課延長一小時 
第7週
10/27  Ch6-8 上課延長一小時 
第8週
11/03  Ch6-8 
第9週
11/10  Ch6-8 
第10週
11/17  Mid-exam 
第11週
11/24  Ch 9-15 
第12週
12/01 停課 改至 12/05  Ch 9-15 
第13週
12/08  Ch 9-15 
第14週
12/15  Ch 9-15 
第15週
12/22  Ch 9-15 
第16週
12/29  Ch 9-15 
第17週
1/05  review 
第18週
01/12  Final-exam