課程資訊
課程名稱
寬能隙半導體技術
Wide Gap Semiconductor Technologies 
開課學期
102-1 
授課對象
電機資訊學院  光電工程學研究所  
授課教師
馮哲川 
課號
OE5026 
課程識別碼
941EU0350 
班次
 
學分
全/半年
半年 
必/選修
選修 
上課時間
星期三5,6,7(12:20~15:10) 
上課地點
博理216 
備註
本課程以英語授課。
總人數上限:30人 
Ceiba 課程網頁
http://ceiba.ntu.edu.tw/1021OE5026_ 
課程簡介影片
 
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課程概述

consisting of four major parts as
[A] Fundamentals
Introduction to Wide Gap Semiconductors; physics and properties of GaN & related materials; GaN-based Quantum Wells (QWs), Quantum Dots (QDs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques;
[B] Structures, properties and MOCVD growth of III-Nitrides
MOCVD systems; Substrates; MO precursors and source materials; Preparation prior to epitaxy; Buffer growth and Physics; Un-doped GaN; Si-doped n-type GaN; Mg-doped p-type GaN; InGaN and phase separation; AlGaN and AlN; InGaN-GaN multiple quantum well (MQW); InGaN-based LED; InGaN-based LD; AlGaN-GaN SL; AlGaN-based UV detectors; Deep UV light emitters;
[C] Advanced Studies
Penetrating optical, electrical and structural analysis; Optoelectronic device design; Development of blue LEDs and LDs. Wavelengths tuning by controlling the composition. GaN-based LED & LD with various wavelengths, ranging in red-yellow-green-blue-violet, in one substrate material. Mass production and fast characterization of GaN materials and structures;
[D] Applications of wide gap semiconductors
Display technology; Solid state lighting; Optical Communication; Optics; Photonics; Automobiles; Power electronics; Solar cells; Aero- and space-technology.
 

課程目標
Help students to get knowledge and basic skills on Fundamentals to Wide Gap Semiconductors; physics and properties of GaN & related materials; GaN-based Quantum Wells (QWs), Quantum Dots (QDs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques. 
課程要求
General College Physics。

Grading:
Homework (30%), mid-term exam (30%), final exam (& attendancy) (40%) 
預期每週課後學習時數
 
Office Hours
每週三 16:30~17:30 
參考書目

More references: to spread on teaching course
 
指定閱讀
Textbook: The Blue Laser Diode - The Complete Story
by Nakamura, Shuji, Pearton, Stephen, and Fasol, Gerhard (Springer, 2000) 
評量方式
(僅供參考)
 
No.
項目
百分比
說明
1. 
homeworks 
30% 
6-8 home works to assign 
2. 
mid-exam 
30% 
close book writing exam 
3. 
final-exam & attendence 
40% 
close book writing final exam (30%), course-attenddence (10%) 
 
課程進度
週次
日期
單元主題
第1週
9/11  Chapter-1 
第2週
9/18  Chapter-2 
第3週
9/25  Chapter-3 
第4週
10/02  Chapter-4 
第5週
10/09  Chapter-5 
第6週
10/16  Chapter-6 
第7週
10/23  Chapter-7 
第8週
10/30  Chapter-8 
第9週
11/06  Chapter-9 
第10週
11/13  mid-exam 
第11週
11/20  Chapter-10 
第12週
11/27  Chapter-11 
第13週
12/04  Chapter-12 
第14週
12/11  Chapter-13 
第15週
12/18  Chapter-14,15 & additional 
第16週
12/25  final course review 
第17週
1/01  holiday 
第18週
1/8/2014  final exam