課程資訊
課程名稱
短波長半導體工程
Short-wavelength Semiconductor Engineering 
開課學期
103-1 
授課對象
電機資訊學院  電機工程學研究所  
授課教師
馮哲川 
課號
OE5029 
課程識別碼
941EU0380 
班次
 
學分
全/半年
半年 
必/選修
選修 
上課時間
星期三5,6,7(12:20~15:10) 
上課地點
博理212 
備註
本課程以英語授課。
總人數上限:30人 
Ceiba 課程網頁
http://ceiba.ntu.edu.tw/1031SWSE2014 
課程簡介影片
 
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課程概述

[A] Introduction to semiconductor engineering for short-wavelength application

[B] Crystal growth of semiconductors for short-wavelength application
Advanced industry production MOCVD systems (Emcore/Vecco, Aixtron, Thomas Swan);
High temperature (HT) sublimation growth of bulk SiC crystal;
HT chemical vapor deposition (CVD) of SiC hetero- and homo-epitaxy structures;
Epitaxy of GaN-based materials and quantum structures on Si, SiC and other substrates;
Epitaxy of short wavelength semiconductors for advanced electronic devices;
Various other crystal growth techniques on ZnO, III-Nitrides etc.;

[C] Analysis Engineering for short-wavelength semiconductors
Polytype crystalline structures; Stress and strain in layered structural materials;
In-situ epitaxy monitoring in MOCVD growth of short-wavelength semiconductors;
Interdisciplinary techniques for materials analysis on blue-UV semiconductors;
Optical analysis (Photoluminescence, Raman scattering, transmission/reflectance);
Structural analysis (high-resolution X-ray diffraction, electron microscopy);
Surface and Nuclear science/engineering analysis; Defects engineering.

[D] Nano-structural and electronic device engineering in short-wavelength range
MOCVD growth of III-Nitrides Quantum dots; Growth of nano-structural SiC and ZnO;
Optical and structural properties of nano-structural short-wavelength semiconductors;
SiC and (AlInGa)N for high speed, high frequency and power electronics applications;
Processing techniques on wide-gap semiconductor electronics and nano-structural devices. 

課程目標
Semiconductors working in short-wavelength region, nano-, oxides & wide gap materials are fundamental materials for short-wavelength engineering application in modern optoelectronics/electronics devices. This course focuses more on SiC, AlN, ZnO & their alloy, new nano-, oxides & wide gap materials. Various growth, processing & analyzing technologies on them are introduced and help students to handle.
As the 3rd course beyond Wide Gap Semiconductor Technologies and Compound Semiconductor Characterization Technologies, it provides scientific foundation and knowledge beyond above two courses. SiC, AlN, ZnO & their alloy, Carbon nanotubes, Graphenes, new C-based & advanced oxides of HfO2, TiO2 etc for advanced engineering application in much short wavelength (deep UV) range are introduced. Up-to-date advanced researches are emphasizing, also with training on scientific reading & lecturing in English. 
課程要求
Homework (20%), mid-term exam (40%), final exam (40%)
Most HW with literature reviews/studies, Exams with oral presentations

prerequisite: no.

【additional note: It is very different from the course Wide Gap Semiconductor Tech which uses Nakamura’s The Blue Laser Diode as textbook and is limited with mainly Nitrides and Nichia’s results for some LED/LD only. This course deals with much wide range of short-wavelength (or wide gap) semiconductor systems and more advanced growth/analysis engineering, emphasizing for industry】. 
預期每週課後學習時數
 
Office Hours
 
參考書目
Textbook: NO
Reference: References are provided in the course, and some are: Z C Feng/J H Zhao, Silicon Carbide Materials, Processing, and Devices (Taylor & Francis, 2003); Z C Feng, SiC Power Materials, Devices and Applications, Springer, 2004); III-Nitride Semiconductor Materials, Editor: Zhe Chuan FENG, Imperia College Press, London, 440pp, 2006; III-Nitride Devices and Nanoengineering, Zhe Chuan FENG (ed.), Imperia College Press, London, 462pp, 2008; Handbook of Zinc Oxides and Related Materials: Volume 1) Materials, and Volume 2) Devices and Nano-Engineering, Editor: Zhe Chuan FENG, CRC press, Taylor & Francis Group, London/New York, www.crcpress.com, 440pp+640pp, 2012.
 
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