課程資訊
課程名稱
短波長半導體工程
SHORT-WAVELENGTH SEMICONDUCTOR ENGINEERING 
開課學期
97-2 
授課對象
學程  光電科技學程  
授課教師
馮哲川 
課號
OE5029 
課程識別碼
941EU0380 
班次
 
學分
全/半年
半年 
必/選修
選修 
上課時間
星期三5,6,7(12:20~15:10) 
上課地點
博理212 
備註
本課程以英語授課。
總人數上限:30人 
 
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課程概述

[A] INTRODUCTION TO SEMICONDUCTOR ENGINEERING FOR SHORT-WAVELENGTH APPLICATION

[B] CRYSTAL GROWTH OF SEMICONDUCTORS FOR SHORT-WAVELENGTH APPLICATION
ADVANCED INDUSTRY PRODUCTION MOCVD SYSTEMS (EMCORE/VECCO, AIXTRON, THOMAS SWAN);
HIGH TEMPERATURE (HT) SUBLIMATION GROWTH OF BULK SIC CRYSTAL;
HT CHEMICAL VAPOR DEPOSITION (CVD) OF SIC HETERO- AND HOMO-EPITAXY STRUCTURES;
EPITAXY OF GAN-BASED MATERIALS AND QUANTUM STRUCTURES ON SI, SIC AND OTHER SUBSTRATES;
EPITAXY OF SHORT WAVELENGTH SEMICONDUCTORS FOR ADVANCED ELECTRONIC DEVICES;
VARIOUS OTHER CRYSTAL GROWTH TECHNIQUES ON ZNO, III-NITRIDES ETC.;

[C] ANALYSIS ENGINEERING FOR SHORT-WAVELENGTH SEMICONDUCTORS
POLYTYPE CRYSTALLINE STRUCTURES; STRESS AND STRAIN IN LAYERED STRUCTURAL MATERIALS;
IN-SITU EPITAXY MONITORING IN MOCVD GROWTH OF SHORT-WAVELENGTH SEMICONDUCTORS;
INTERDISCIPLINARY TECHNIQUES FOR MATERIALS ANALYSIS ON BLUE-UV SEMICONDUCTORS;
OPTICAL ANALYSIS (PHOTOLUMINESCENCE, RAMAN SCATTERING, TRANSMISSION/REFLECTANCE);
STRUCTURAL ANALYSIS (HIGH-RESOLUTION X-RAY DIFFRACTION, ELECTRON MICROSCOPY);
SURFACE AND NUCLEAR SCIENCE/ENGINEERING ANALYSIS; DEFECTS ENGINEERING.

[D] NANO-STRUCTURAL AND ELECTRONIC DEVICE ENGINEERING IN SHORT-WAVELENGTH RANGE
MOCVD GROWTH OF III-NITRIDES QUANTUM DOTS; GROWTH OF NANO-STRUCTURAL SIC AND ZNO;
OPTICAL AND STRUCTURAL PROPERTIES OF NANO-STRUCTURAL SHORT-WAVELENGTH SEMICONDUCTORS;
SIC AND (ALINGA)N FOR HIGH SPEED, HIGH FREQUENCY AND POWER ELECTRONICS APPLICATIONS;
PROCESSING TECHNIQUES ON WIDE-GAP SEMICONDUCTOR ELECTRONICS AND NANO-STRUCTURAL DEVICES.
 

課程目標
 
課程要求
HOMEWORK (30%), MID-TERM EXAM (30%), FINAL EXAM (40%)
MOST HW WITH LITERATURE REVIEWS/STUDIES, EXAMS WITH ORAL PRESENTATIONS

PREREQUISITE: NO.

【ADDITIONAL NOTE-DIFFERENCE WITH THE COURSE WIDE GAP SEMICONDUCTOR TECH WHICH USES NAKAMURA’S THE BLUE LASER DIODE AS TEXTBOOK AND IS LIMITED WITH MAINLY NITRIDES AND NICHIA’S RESULTS FOR SOME LED/LD ONLY. THIS COURSE DEALS WITH MUCH WIDE RANGE OF SHORT-WAVELENGTH (OR WIDE GAP) SEMICONDUCTOR SYSTEMS AND MORE ADVANCED GROWTH/ANALYSIS ENGINEERING, EMPHASIZING FOR INDUSTRY】. 
預期每週課後學習時數
 
Office Hours
 
參考書目
REFERENCES ARE PROVIDED IN THE COURSE, AND SOME ARE: Z C FENG/J H ZHAO, SILICON CARBIDE MATERIALS, PROCESSING, AND DEVICES (TAYLOR & FRANCIS, 2003); Z C FENG, SIC POWER MATERIALS, DEVICES AND APPLICATIONS, SPRINGER, 2004); J I PANKOVE/T D MOUSTAKAS, GALLIUM NITRIDE II (ACADEMIC, 1999). 
指定閱讀
 
評量方式
(僅供參考)
   
課程進度
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