課程名稱 |
寬能隙半導體技術 Wide Gap Semiconductor Technologies |
開課學期 |
101-1 |
授課對象 |
學程 光電科技學程 |
授課教師 |
馮哲川 |
課號 |
OE5026 |
課程識別碼 |
941EU0350 |
班次 |
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學分 |
3 |
全/半年 |
半年 |
必/選修 |
選修 |
上課時間 |
星期四5,6,7(12:20~15:10) |
上課地點 |
博理212 |
備註 |
本課程以英語授課。 總人數上限:30人 |
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課程簡介影片 |
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核心能力關聯 |
核心能力與課程規劃關聯圖 |
課程大綱
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為確保您我的權利,請尊重智慧財產權及不得非法影印
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課程概述 |
consisting of four major parts as
[A] Fundamentals
Introduction to Wide Gap Semiconductors; physics and properties of GaN, SiC, ZnO & related materials; GaN-based Quantum Wells (QWs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques;
[B] Structures, properties and MOCVD growth of III-Nitrides
MOCVD systems; Substrates; MO precursors and source materials; Preparation prior to epitaxy; Buffer growth and Physics; Un-doped GaN; Si-doped n-type GaN; Mg-doped p-type GaN; InGaN and phase separation; AlGaN and AlN; InGaN-GaN multiple quantum well (MQW); InGaN-based LED; InGaN-based LD; AlGaN-GaN SL; AlGaN-based UV detectors; Deep UV light emitters;
[C] Advanced Studies
Penetrating optical, electrical and structural analysis; Optoelectronic device design; Development of blue LEDs and LDs. Wavelengths tuning by controlling the composition. GaN-based LED & LD with various wavelengths, ranging in red-yellow-green-blue-violet, in one substrate material. Mass production and fast characterization of GaN materials and structures;
[D] Applications of wide gap semiconductors
Display technology; Solid state lighting; Optical Communication; Optics; Photonics; Automobiles; Power electronics; Solar cells; Aero- and space-technology.
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課程目標 |
Help students to get knowledge and basic skills on Fundamentals to Wide Gap Semiconductors; physics and properties of GaN, SiC, ZnO & related materials; GaN-based Quantum Wells (QWs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques. |
課程要求 |
General College Physics。
Grading:
Homework (30%), mid-term exam (30%), final exam (40%) |
預期每週課後學習時數 |
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Office Hours |
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指定閱讀 |
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參考書目 |
Textbook: The Blue Laser Diode - The Complete Story
by Nakamura, Shuji, Pearton, Stephen, and Fasol, Gerhard (Springer, 2000)
Reference: to be spread on teaching course
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評量方式 (僅供參考) |
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